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Other articles related with "growth temperature"：
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118101 |
Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮) |
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Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si |
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Chin. Phys. B
2021 Vol.30 (11): 118101-118101
[Abstract]
(466)
[HTML 1 KB]
[PDF 1911 KB]
(114)
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47801 |
Rui Li(李睿), Ming-Sheng Xu(徐明升), Peng Wang(汪鹏), Cheng-Xin Wang(王成新), Shang-Da Qu(屈尚达), Kai-Ju Shi(时凯居), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) |
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Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content |
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Chin. Phys. B
2021 Vol.30 (4): 47801-
[Abstract]
(376)
[HTML 1 KB]
[PDF 2584 KB]
(47)
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118102 |
Jing Zhang(张静), Hong-Liang Lv(吕红亮), Hai-Qiao Ni(倪海桥), Shi-Zheng Yang(杨施政), Xiao-Ran Cui(崔晓然), Zhi-Chuan Niu(牛智川), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate |
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Chin. Phys. B
2019 Vol.28 (11): 118102-118102
[Abstract]
(555)
[HTML 1 KB]
[PDF 2517 KB]
(124)
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28101 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy |
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Chin. Phys. B
2019 Vol.28 (2): 28101-028101
[Abstract]
(807)
[HTML 1 KB]
[PDF 1447 KB]
(176)
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38101 |
Fan Hai-Bo(范海波), Zheng Xin-Liang(郑新亮), Wu Si-Cheng(吴思诚), Liu Zhi-Gang(刘志刚), and Yao He-Bao(姚合宝) |
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Zn/O ratio and oxygen chemical state of nanocrystalline ZnO films grown at different temperatures |
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Chin. Phys. B
2012 Vol.21 (3): 38101-038101
[Abstract]
(1128)
[HTML 1 KB]
[PDF 566 KB]
(1350)
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